Oxidation kinetics of hot-pressed silicon carbide

Microstructure and Fracture Toughness of Hot-Pressed Silicon Carbide Reinforced with Silicon Carbide Whisker

The effects of p-Sic whisker addition on the microstructural evolution and fracture toughness (K,c) of hot-pressed SIC were investigated. Most of the whiskers added disappeared during the densification process by transformation into the a-phase. The remaining whiskers acted as nuclei for grain growth, resulting in the formation of large tabular grains around the whiskers. The tabular grains aro...

Fundamental Aspects of Silicon Carbide Oxidation

Silicon carbide (SiC), which exhibits a wider band gap as well as a superior breakdown field and thermal conductivity over conventional Si, has gained considerable attention for future power electronics [1]. Among the various types of power devices, metal-oxide-semiconduc‐ tor field-effect transistors (MOSFETs), which provide a normally-off characteristic, should become a key component for next...

Oxidation Behaviour of Silicon Carbide - a Review

Silicon Carbide as an inorganic material possesses properties like high thermochemical stability, high hardness and fracture toughness, low thermal expansion coefficient etc. It is therefore, widely used in the making of refractory, semiconductor devices, combustion engines, etc. Being a nonoxide, it has a tendency to get oxidized at elevated temperature under oxidizing atmosphere. Oxidation of...

The Active Oxidation of Silicon Carbide

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 0 2(g) = Si02(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + 0 2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and ...

Thermal Oxidation Mechanism of Silicon Carbide